Ga2O3 MOSFET Device with Al2O3 Gate Dielectric
نویسندگان
چکیده
منابع مشابه
MoS2 Dual-Gate MOSFET With Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as the gate dielectric. Our C–V study of MOSFET structures shows good interface between 2-D MoS2 crystal and ALD Al2O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/...
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ژورنال
عنوان ژورنال: Journal of Inorganic Materials
سال: 2018
ISSN: 1000-324X
DOI: 10.15541/jim20170528